Si Wafer (111) with 10 degree miscut towards <112><110>, 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm) - SiUc101d05C1deg10R1000 Te

Si Wafer (111) with 10 degree miscut towards <112><110>, 4 " dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm) - SiUc101d05C1deg10R1000 TeSingle crystal Si, Conductivity: N type ( undoped) Resistivity: >1000 ohm CM Size: 4" diameter x 0. 5 mm Orientation: (111)with 10 degree miscut towards <112><110> , Polish: One side polished Surface roughness, Ra: < 5A (RMS) Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

Size: 34 mm Diameter  x 0

Orientation tolerance + / - 0

Thickness of highly oriented polycrystalline Cu <111> film: 400 nm

Impregnated diamond blade with Wear-resistant TiC coating

Single crystal  LiAlO2

Dimension: 6 mm (0

ID: 230 mm (see photo below)

reversible

EQ-HDS-250-200 is a hybrid film applicator that can do tape coating for thicker film and slot die coating for thin film

Working Voltage 208 - 240V AC (single-phase)

Notice: It is suggested to use an external hard drive to keep an instant backup of the collected data

Size:          10x10x 0